FACILITY
Cuprum promise to always do our best.
Facilities
DC Sputter
* Equipped with three sputter guns
* Multilayer deposition and co-deposition available
* Substrate heated up to optimum value in a short period using halogen lamp
* Substrate rotation & revolution
Evaporating & Glovebox System
* Metal coating
* Alloy metal coating (Co-evaporation)
* Each kind of metal (Au, Ag, Al, Cr, Cu, Ti, etc.)
Photolithography
* Manual Control System
* Exposure/camera module
* Mask holder
* Substrate stage
* Single CCD Zoom Microscope and 9" CRT Monitor
* Operation Controller
* Wedge Error Compensation
Optical Microscope
* Vertical stage movement : 25㎜ stage stroke with coarse adjustment limit stopper
* Torque adjustment for coarse adjustment knobs
* Light intensity LED indicator
* Magnification : 5 10 20 50 100 1000×
Probe Station
* The probe station is used to physically acquire signals from the internal nodes of a semiconductor device.
* The probe station utilizes manipulators which allow the precise positioning of thin needles on the surface of a semiconductor device
* The mechanical probe station is often used in the failure analysis of semiconductor devices.
Semiconductor analyzer
* Measurement features include single and multi-channel sweep time sampling list sweep quasi-static CV direct control and arbitrary linear waveform generation (ALWG) GUI for the HV-SPGUs.
* Optional integrated capacitance module supports CV measurements up to 5 MHz
* Easy test automation with built-in semiautomatic wafer prober drivers and test sequencing without programming via the Quick Test mode
Alpha Step
* Performs film thickness and metal etch uniformity on open geometries with automated analysis
* Industrial Machining
* Roughness of machined polish surfaces
* Roughness on ceramic substrates and hybrid circuit components
* Characterize stiction and analyze area
RF Sputter
* RF Magnetron Sputter
* Dielectric (IGZO, Al2O3, SiO2, TiO2, Etc.)
Micro-scratch system
* Normal load: 30mN-30N
* Sample holder clamping capacity: Max.40×40mm
* Maximum scratch length: Max. 120mm
* Penetration Depth: Max. 1mm
* Scratching speed (adjustable): 0.4 to 600 mm/min
* Tangential force(Ft): 30N
4point probe
* Measurement is simply completed by pressing the START BUTTON only and the measurement value is displayed on the LCD display window of the system.
* Features Automatic contact system(Center 1 point) Automatic range selection Data communication port & software
* Configuration The system consists of the following components
Thin Film Stress Measurement System
* Stress range: 1 x 107 to 4 x 1010 dynes/cm2 (Provided that the wafer curvature change before and after processing is greater than 1micron (bow height) for a 170mm scan line)
* Wafer sizes: 200mm or smaller
* Scan range: Up to 170mm
* Scan line: Single scan line at any wafer orientation
* Mapping: Multi scan line mapping by manually rotating wafers. Max of 6 line mapping with 30 deg between each line
