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New molybdenum alloy for BCE
New molybdenum alloy for BCE
Issue: Pure molybdenum is not suitable for back channel etching(BCE) type IGZO TFTs
Solution: New molybdenum alloy for BCE type IGZO TFTs(US Registered Patent)
Requirements for copper tri-layer metallization
Electrical Characterization of BCE-TFTs with a-IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections 46. 863, SID digest 2015.
New molybdenum alloy without fluoride rather than Change composition of semiconductor
Low damage BCE type IGZO: Reduction in Mo Residue on IGZO surface after S/D wet etching
SID Digest 2016
“Environmental friendly copper/molybdenum metallization
for BCE type IGZO TFTs”
TOF-SIMS depth profiles of IGZO
BCE type IGZO TFTs pure Mo S/D vs. New Mo alloy S/D
Transfer characteristics of a-IGZO TFTs
(VD =0.1 W/L= 100/20)
Electrical properties without fluoride ion in H2O2 solution
Source/Drain material | FE (㎠/Vs) | ION/IOFF | Vth (V) |
Mo | 12.7 | 2.91 X 104 | 12.25 |
Mo ternary alloy A | 13.8 | 7.01 X 105 | 7.08 |
Mo ternary alloy B | 11.1 | 3.03 X 104 | 12.50 |
