PRODUCT
Cuprum promise to always do our best.
Cu Electroplating solution for Advanced TGV Filling
Our Cu electroplating solution is optimized for high-aspect-ratio Through Glass Via (TGV) filling.
It enables excellent bottom-up deposition, minimizes void formation, and improves process reliability for advanced semiconductor packaging.
Key Features
✔ Void-free Filling
✔ High Aspect Ratio
✔ Excellent Throwing Power
✔ Low Overburden
✔ High Bath Stability
Selectivity of Copper Electroplating
The normal process causes excessive top copper overburden (73 µm), which leads to over plating and high CMP load.
The Cuprum B process increases selectivity, reducing the top layer to 33 µm while keeping the via fully filled.
TGV electroplatingAR 8:1 (Only DC plating)
The Cuprum additive exhibits a higher filling ratio than JGB
Deep via filling enabled by the interaction of the Cuprum additive
